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MMBFJ177LT1G

Manufacturer

ON Semiconductor

Model

MMBFJ177LT1G

Category

special_electronic_devices
special_transistors

The MMBFJ177LT1G is a compact SOT-23 JFET optimized for low-power switching and signal amplification in temperature-sensitive environments. With 1.5mA drain current, 30V breakdown voltage, and 300Ω RDS(on), it suits battery-powered devices and IoT sensors. Thermal management requires careful PCB layout with copper pours, while soldering must avoid prolonged heat exposure. Marketed at 0.0524 USD in bulk, it fills cost-sensitive low-power roles but lacks high-current handling capabilities.

Reference Pricing

1+ :$0.1232
10+ :$0.0896
30+ :$0.0728
100+ :$0.0686
500+ :$0.0686
1000+ :$0.0686

Reference Stock

Available:121192

Specifications

Drain Current-20 mAdc
Drain-Source Voltage-25 Vdc
Gate-Source Voltage25 Vdc
Input ImpedanceNot provided
Operating Temperature Range-55 to +150 °C
Output ImpedanceNot provided
Package Size0.89mm x 1.11mm x 2.80mm
Package TypeSOT-23
Rated VoltageNot provided
Transconductance300 mΩ

Function And Role

Core Function

Low-power JFET for switching and signal amplification

Key Characteristics

  • 225mW power dissipation
  • 1.5mA drain current at 15V
  • 300Ω RDS(on)
  • 30V gate-source breakdown voltage

Application Domains

Basic Scenarios

  • Low-power signal conditioning circuits
  • General-purpose switching applications
  • RF filter/amp biasing

Extended Scenarios

  • Sensor interface circuits (pressure/temperature)
  • Power management systems
  • Battery management systems

Precautions

Soldering

Use 3-5 seconds per pad with 300°C peak temperature

Current Limit

Max continuous drain current: 1.5mA

Voltage Limit

Max Vds: 30V, Max Vgs: ±20V

Thermal Management

Thermal resistance: 170°C/W

Storage

Store in <10% RH, -20°C to +85°C environments

Risk Warnings
  • Static discharge hazard (ESD rating <2000V)
  • Overvoltage damage risk (Vds >30V)
  • Excessive power dissipation (>225mW)

Alternative Model Params

  • Pd (Power Dissipation)
  • Idss (Drain Current)
  • RDS(on) (On-Resistance)
  • V(BR)GSS (Breakdown Voltage)
  • Operating Temperature Range

Design Recommendations

Layout

Maintain 10mil trace spacing for thermal relief

Thermal

Use copper pours >20mm² for heat dissipation

Compatibility

Verify gate threshold voltage (Vgs(th)) compatibility

Testing

Test at 85°C/85% RH for 1000h reliability

Market Positioning

Strengths
  • Smallest SOT-23 package in 30V JFET category
  • Cost-effective (0.0524 USD @3000 units)
  • RoHS compliant with REACH certification
Weaknesses
  • Limited to <2mA applications
  • Lower thermal performance than TO-92 variants
  • No built-in protection diodes

Datasheet

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