IRLML6402TRPBF
Manufacturer
Model
IRLML6402TRPBF
Category
The IRLML6402TRPBF is a cost-effective N-channel MOSFET optimized for low-power switching applications. With 20V rating, 4.1A continuous current, and 75mΩ RDS(on), it suits DC-DC converters and motor control in consumer electronics. Its wide operating temperature range (-55°C to +150°C) enables automotive and industrial use. Careful thermal management and gate drive matching are required for reliable operation in continuous high-power scenarios.
Reference Pricing
Reference Stock
Specifications
| Drain Current (Id) | -4.1A |
| Drain-Source Voltage (Vds) | -20V |
| Gate-Source Voltage (Vgs) | ±12V |
| On-Resistance (Rds(on)) | 39mΩ |
| Operating Temperature Range | -55°C to 150°C |
| Package Material | Plastic |
| Package Type | SOT-23 |
| Rated Voltage | 20V |
| Switching Speed | 12ns - 35ns |
| Threshold Voltage (Vth) | -0.45V |
| Transconductance (gm) | 6S |
Function And Role
Core Function
N-channel MOSFET designed for low-power switching applications
Key Characteristics
- 20V drain-source voltage
- 4.1A continuous drain current
- 75mΩ on-resistance at 2.5V, 4.1A
- 1.7W power dissipation
- 1V gate threshold voltage
- 190pF reverse transfer capacitance (4V Vds)
- 740pF input capacitance (4V Vds)
- 7.8nC gate charge (4.5V Vgs)
- -55°C to +150°C operating temperature
Application Domains
Basic Scenarios
- Low-power DC-DC converters
- Motor control circuits
- Battery management systems
- Power supply protection
Extended Scenarios
- Renewable energy systems
- Automotive electronic control units
- Industrial automation equipment
- Consumer electronics with compact power requirements
Precautions
| Soldering | Use fine pitch soldering tools and avoid excessive heat on SOT-23 package |
| Current Limit | Max continuous drain current 4.1A (peak 8A for 10ms) |
| Voltage Limit | Max Vds 20V, Vgs absolute value 20V |
| Thermal Management | Thermal resistance 23.4°C/W, recommend heat sink for >1W continuous operation |
| Storage | Store in antistatic packaging below 80% RH and -40°C to +85°C |
| Risk Warnings |
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Alternative Model Params
- Vdss (20V±5%)
- Id (4.1A max)
- RDS(on) (75mΩ max)
- Pd (1.7W max)
- Vgs(th) (1V±0.2V)
- Crss/Ciss <200pF
- Qg <8nC
Design Recommendations
| Layout | Maintain 10mil gate-to-source spacing in PCB layout |
| Thermal | Implement thermal vias under package for high-power applications |
| Compatibility | Verify gate driver compatibility with 1-4.5V control signals |
| Testing | Perform gate charge measurement and thermal cycling tests |
Market Positioning
| Strengths |
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| Weaknesses |
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