BSS131
Manufacturer
Model
BSS131
Category
The BSS131 is a compact N-channel MOSFET optimized for space-constrained low-voltage switching applications. With its 240V rating, 9.07Ω RDS(on), and -55°C to +150°C operation, it suits consumer electronics, automotive ECUs, and IoT devices. Thermal management requires careful consideration of its 360mW limit, and gate drive stability is critical for reliable switching. The SOT-23 package offers cost advantages but limits current handling to <1A. Proper soldering techniques and ESD protection are essential for long-term reliability.
Reference Pricing
Reference Stock
Specifications
| Drain Current (Id) | 0.1A (TA =25℃), 0.09A (TA =100℃) |
| Drain-Source Voltage (Vds) | 240V |
| Gate-Source Voltage (Vgs) | ±20V |
| On-Resistance (Rds(on)) | 9.07Ω (Vgs=4.5 V, /D=0.09 A), 7.7Ω (Vgs=10 V, / d=0.1 A) |
| Operating Temperature Range | -55℃ to 150℃ |
| Package Material | Not specified in the provided content |
| Package Type | SOT-23 |
| Rated Voltage | 240V |
| Switching Speed | {"Turn-on Delay Time (td(on))": "3.3ns", "Rise Time (tr)": "3.1ns", "Turn-off Delay Time (td(off))": "13.7ns", "Fall Time (tf)": "64.5ns"} |
| Threshold Voltage (Vth) | 0.8V (Vds=0 V, /b=56 μA), 1.4V (Vds=0 V, /b=56 μA) |
| Transconductance (gm) | 0.06S (IV psl>2/ blR ds(on)max, /D=0.08 A), 0.13S (IV psl>2/ blR ds(on)max, /D=0.08 A) |
Function And Role
Core Function
1 N-channel MOSFET for low-voltage switching applications
Key Characteristics
- 240V drain-source voltage (Vdss)
- 110mA continuous drain current (Id)
- 9.07Ω on-resistance (RDS(on)) at 4.5V gate voltage
- 360mW power dissipation (Pd)
- 800mV gate threshold voltage (Vgs(th))
- Operating temperature range: -55°C to +150°C
Application Domains
Basic Scenarios
- Low-power signal switching in consumer electronics
- DC-DC converter circuits
- Battery management systems
Extended Scenarios
- Automotive electronic control units
- IoT sensor node power switching
- Medical device low-voltage regulation
Precautions
| Soldering | Use reflow soldering with 250-280°C peak temperature |
| Current Limit | Max continuous current: 110mA (pulsed: 300mA) |
| Voltage Limit | Max Vds: 240V continuous, 400V peak |
| Thermal Management | Thermal resistance: 62.5°C/W (junction-to-case) |
| Storage | Store in <10% RH, -20°C to +80°C environments |
| Risk Warnings |
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Alternative Model Params
- Vdss ≥ 240V
- RDS(on) ≤ 10Ω
- Pd ≤ 400mW
- Operating temp: -40°C to +150°C
- Vgs(th) ≤ 1V
Design Recommendations
| Layout | Maintain 10mil trace width for gate drive |
| Thermal | Use 0603 copper parasitic capacitance (Ciss=77pF) |
| Compatibility | Optimal with gate voltage 2.5-4.5V |
| Testing | Verify RDS(on) at 25°C and 150°C |
Market Positioning
| Strengths |
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| Weaknesses |
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Datasheet
Assist inquiry
Distributors
Shenzhen Bosenyuan Technology Co., Ltd.
Shenzhen Chengyanxiang Technology Co., Ltd.
Shenzhen Hexingan Electronics Co., Ltd.
Shenzhen Zhenghongtai Technology Co., Ltd.
Shenzhen ZeroFakeCore Technology Co., Ltd.
Shenzhen Mayarda Technology Co., Ltd.
Shenzhen Qianjin Hongye Electronic Co., Ltd.
Shenzhen Sakwei Microelectronics Co., Ltd.
Shenzhen Minlong Electronics Technology Co., Ltd.
Shenzhen Jingteng Technology Co., Ltd.
Shenzhen Xiangxun Electronic Technology Co., Ltd.
Shenzhen Xunshunda Technology Co., Ltd.
Shenzhen ZhiRuiHong Electronic Technology Co., Ltd.