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IRF540NPBF

Model

IRF540NPBF

Category

semiconductor
transistors

The OSEN IRF540NPBF is a high-current N-channel MOSFET designed for power switching applications requiring up to 33A continuous current and 100V switching voltage. With 35mΩ on-resistance and 130W power dissipation, it suits motor control, power supplies, and industrial automation systems. Critical design considerations include proper heat sinking, gate drive optimization, and thermal management. While cost-effective and widely available, its thermal performance at continuous full load and lack of integrated protection features represent key limitations for high-frequency or extreme thermal environments.

Reference Pricing

5+ :$0.2996
50+ :$0.2478
150+ :$0.1806
500+ :$0.1652
2500+ :$0.1512
5000+ :$0.1708

Reference Stock

Available:1400

Specifications

Drain Current (Id)33A
Drain-Source Voltage (Vds)100V
Gate-Source Voltage (Vgs)±20V
On-Resistance (Rds(on))35mΩ
Operating Temperature Range-55℃ to 150℃
Package MaterialPlastic
Package TypeTO-220
Rated Voltage100V
Switching Speed{"Turn-On Delay Time (Td(on))": "40ns", "Rise Time (Tr)": "45ns", "Turn-Off Delay Time (Td(off))": "200ns", "Fall Time (Tf)": "65ns"}
Threshold Voltage (Vth)2.0V
Transconductance (gm)8S

Function And Role

Core Function

N-channel power switching device for high-current applications

Key Characteristics

  • 100V drain-source voltage
  • 33A continuous drain current
  • 35mΩ@10V on-resistance
  • 130W power dissipation
  • 2V gate threshold voltage
  • TO-220 packaging

Application Domains

Basic Scenarios

  • motor drive systems
  • power supply units
  • industrial automation
  • power conversion circuits

Extended Scenarios

  • renewable energy systems
  • high-power LED arrays
  • industrial motor controls
  • automotive electrical systems

Precautions

Soldering

Use 300-350°C soldering iron with 0.5-1.0mm tip, avoid prolonged heat exposure

Current Limit

Max continuous current 33A (100°C ambient), peak current 150A (10s duration)

Voltage Limit

Max Vds 100V, overvoltage protection required beyond 125V

Thermal Management

Critical heat dissipation requirement (130W), recommend 50W+ heat sink

Storage

Store in <10% RH environment, max temperature 85°C

Risk Warnings
  • ESD sensitive
  • Risk of high-temperature storage
  • Overload thermal failure

Alternative Model Params

  • Vdss ≥90V
  • Idc ≥30A
  • RDS(on) ≤40mΩ
  • Pd ≥120W
  • Vgs(th) ≤2.5V

Design Recommendations

Layout

Maintain ≥3mm creepage distance in high-voltage sections

Thermal

Implement thermal vias under tab for PCB cooling

Compatibility

Optimize gate drive with 10-15V pulse width modulator

Testing

Perform 100% IR test at 25°C/85°C/125°C conditions

Market Positioning

Strengths
  • Cost-effective pricing
  • Widely available in bulk quantities
  • Robust TO-220 packaging
Weaknesses
  • Moderate thermal performance at continuous 33A
  • Limited switching frequency support (<100kHz)
  • No built-in protection circuits

Datasheet

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