IRF3205PBF
Manufacturer
Model
IRF3205PBF
Category
The OSEN IRF3205PBF is a TO-220AB packaged N-channel MOSFET designed for high-power switching applications with 55V Vdss, 110A Idc, and 10mΩ RDS(on). It supports power systems in motor drives, inverters, and renewable energy systems requiring robust thermal management and cost-effective solutions. Proper heat sinking, gate drive optimization, and adherence to voltage/current limits are critical for reliable operation.
Reference Pricing
Reference Stock
Specifications
| Drain Current (Id) | 110A |
| Drain-Source Voltage (Vds) | 55V |
| Gate-Source Voltage (Vgs) | ±20V |
| On-Resistance (Rds(on)) | 7mΩ |
| Operating Temperature Range | –55°C to 150°C |
| Package Material | Plastic |
| Package Type | TO-220AB |
| Rated Voltage | 55V |
| Switching Speed | {"Turn-On Delay Time": "14ns", "Rise Time": "101ns", "Turn-Off Delay Time": "50ns", "Fall Time": "65ns"} |
| Threshold Voltage (Vth) | 2.0V |
| Transconductance (gm) | 44S |
Function And Role
Core Function
N-channel MOSFET for power switching and amplification applications
Key Characteristics
- 55V drain-source voltage
- 110A continuous drain current
- 10mΩ RDS(on) at 10V
- 200W power dissipation
- 4V gate threshold voltage
Application Domains
Basic Scenarios
- motor control circuits
- power supply regulation
- inverter systems
Extended Scenarios
- renewable energy conversion
- electric vehicle power electronics
- industrial automation equipment
Precautions
| Soldering | Use high-temperature solder paste and avoid prolonged heating (>3 seconds per pad) to prevent package damage |
| Current Limit | Max continuous current: 110A; peak current: 220A (10ms pulse) |
| Voltage Limit | Max Vds: 55V; absolute maximum Vgs: ±20V |
| Thermal Management | Required heat sink for continuous operation; junction temperature <150°C |
| Storage | Store in <10% RH, <40°C environment for >12 months |
| Risk Warnings |
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Alternative Model Params
- Vdss ≥55V
- Idc ≥110A
- RDS(on) ≤12mΩ
- Pd ≤200W
- Vgs(th) 3.5-4.5V
Design Recommendations
| Layout | Maintain <10mm gate trace length and use star grounding |
| Thermal | Calculate thermal resistance (Rθja) <15K/W with heat sink |
| Compatibility | Use gate driver with >10A peak current capability |
| Testing | Verify switching performance at 100% max current for 1000 cycles |
Market Positioning
| Strengths |
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| Weaknesses |
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