BSS138LT1G
Manufacturer
Model
BSS138LT1G
Category
The onsemi BSS138LT1G is a high-efficiency N-channel MOSFET optimized for low-power switching applications. With a 50V rating, 200mA continuous current, and ultra-low 5.6Ω RDS(on), it excels in battery-powered devices, DC-DC converters, and signal switching circuits. Key features include a compact SOT-23 package, operating range from -55°C to +150°C, and low input capacitance (50pF). Designers should prioritize proper gate drive voltage, thermal management, and static protection. While it offers superior efficiency for its class, its current handling and thermal performance are constrained by the package size. The RoHS compliance and reels of 3000+ units make it suitable for high-volume production but may be cost-prohibitive for very large-scale deployments.
Reference Pricing
Reference Stock
Specifications
| Drain Current (Id) | 200 mA |
| Drain-to-Source Voltage (Vds) | 50 Vdc |
| Gate-to-Source Voltage (Vgs) | ±20 Vdc |
| On-Resistance (Rds(on)) | 5.6 Ω - 10 Ω |
| Operating and Storage Temperature Range | -55 to 150 °C |
| Package Material | Pb-Free and RoHS Compliant |
| Package Type | SOT-23 |
| Rated Voltage | 50 Vdc |
| Switching Speed | 20 ns - 20 ns |
| Threshold Voltage (Vth) | 0.5 V - 1.5 V |
| Transconductance (gm) | 100 mmhos |
Function And Role
Core Function
N-channel MOSFET for low-power switching and signal control
Key Characteristics
- 50V drain-source voltage (Vdss)
- 200mA continuous drain current (Id)
- 5.6Ω on-resistance (RDS(on)) at 2.75V gate-source voltage (Vgs)
- 500mV gate threshold voltage (Vgs(th))
- 225mW power dissipation (Pd)
- Reverse transfer capacitance (Crss) of 5pF @25V
- Input capacitance (Ciss) of 50pF @25V
- Operating temperature range -55°C to +150°C
Application Domains
Basic Scenarios
- Low-power signal switching circuits
- Battery management systems
- DC-DC converters
- Sensor signal conditioning
Extended Scenarios
- Motor control in portable devices
- Energy-efficient lighting systems
- RFID and IoT low-power modules
- Automotive electronic control units
Precautions
| Soldering | Use 250-300°C soldering temperature with 3-5 seconds per pad |
| Current Limit | Max continuous current 200mA (peak 500mA) |
| Voltage Limit | Max Vgs 20V (absolute maximum 30V) |
| Thermal Management | Thermal resistance 62.5°C/W in natural convection |
| Storage | Store in dry environment below 85°C with anti-static packaging |
| Risk Warnings |
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Alternative Model Params
- Vdss (drain-source voltage)
- RDS(on) (on-resistance)
- Continuous drain current (Id)
- Operating temperature range
- Gate threshold voltage (Vgs(th))
- Power dissipation (Pd)
Design Recommendations
| Layout | Use 0.1mm trace width for gate drive paths |
| Thermal | Add 10% derating above 100°C ambient |
| Compatibility | Ensure gate drive voltage ≤15V for optimal switching |
| Testing | Validate Crss/Ciss parameters in circuit operation |
Market Positioning
| Strengths |
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| Weaknesses |
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Datasheet
Assist inquiry
Distributors
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