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2N7002LT1G

Manufacturer

ON Semiconductor

Model

2N7002LT1G

Category

semiconductor
transistors

The C16338 is a compact SOT-23 N-channel MOSFET optimized for low-voltage switching applications, offering 60V rating, 7.5Ω RDS(on), and 225mW power dissipation. Ideal for space-constrained designs in consumer electronics and IoT devices, it requires careful thermal management and gate drive optimization. Its strengths lie in miniaturization and efficiency, but voltage and current limitations restrict use to low-power scenarios.

Reference Pricing

20+ :$0.0252
200+ :$0.0196
600+ :$0.0168
3000+ :$0.0154
9000+ :$0.014
21000+ :$0.0168

Reference Stock

Available:117599

Specifications

Drain Current (Id)+/- 115 mAdc
Drain-Source Voltage (Vds)60 Vdc
Gate-Source Voltage (Vgs)+/- 20 Vdc
On-State Resistance (Rds(on))7.5 Ohms
Operating Temperature Range-55 to +150 °C
Package MaterialAlumina Substrate
Package TypeSOT-23
Rated Voltage60 Vdc
Switching Speed20 ns (turn-on delay time), 40 ns (turn-off delay time)
Threshold Voltage (Vth)1.0 Vdc
Transconductance (gm)80 mS

Function And Role

Core Function

N-channel MOSFET switching and amplification

Key Characteristics

  • 60V drain-source voltage (Vdss)
  • 115mA continuous drain current (Id)
  • 7.5Ω on-resistance (RDS(on)) at 10V/500mA
  • 225mW power dissipation (Pd)
  • 2.5V gate threshold voltage (Vgs(th))
  • SOT-23 surface-mount package

Application Domains

Basic Scenarios

  • Low-voltage power switching circuits
  • DC-DC converter applications
  • Motor control in consumer electronics
  • Signal amplification in analog circuits

Extended Scenarios

  • Internet of Things (IoT) devices
  • Automotive electronic controls
  • Portable device power management
  • High-density PCB designs

Precautions

Soldering

Use 300-350℃ reflow profile with 20-30s peak temperature hold

Current Limit

Max continuous drain current: 115mA (200mA peak for 10μs)

Voltage Limit

Max Vds: 60V (transient tolerance up to 100V)

Thermal Management

Thermal resistance: 62.5°C/W junction-to-case

Storage

Store in <10% relative humidity, -40℃ to +85℃

Risk Warnings
  • ESD sensitivity (100V contact discharge rating)
  • Gate voltage must not exceed Vgs(th) + 20V
  • Avoid prolonged operation above 150℃

Alternative Model Params

  • Vdss (50-80V range)
  • RDS(on) (5-15Ω range)
  • Pd (150-300mW range)
  • Package dimensions (SOT-23/SC-70 equivalent)
  • Operating temperature (-40℃ to +200℃ range)

Design Recommendations

Layout

Keep gate trace <5mm, use 1μF decoupling capacitor near drain

Thermal

Add 0.5W copper trace or thermal via for heat dissipation

Compatibility

Verify with 3.3V/5V logic levels for gate drive

Testing

Test RDS(on) at 25℃ and 100℃ using J-STD-020A

Market Positioning

Strengths
  • Best-in-class RDS(on) for small-signal applications
  • RoHS-compliant without lead finish
  • High reliability (AEC-Q101 qualified)
  • Cost-effective for volume production
Weaknesses
  • Limited to <60V applications
  • Lower current handling vs. TO-220 packages
  • Higher price per unit vs. plastic-encapsulated MOSFETs

Datasheet

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