SI2310-HXY
Manufacturer
Model
SI2310-HXY
Category
The SI2310-HXY is a compact N-channel MOSFET optimized for low-power switching applications. With a 60V rating, 3A continuous current, and ultra-low 89mΩ RDS(on), it suits battery-powered devices and DC-DC converters. Its -55°C to +150°C operating range enables wide temperature operation, while the SOT-23 package ensures space efficiency. Designers should prioritize heat management and gate drive stability to maximize performance in portable and IoT applications.
Reference Pricing
Reference Stock
Specifications
| Drain Current (Id) | 3A |
| Drain-Source Voltage (Vds) | 60V |
| Gate-Source Voltage (Vgs) | ±20V |
| On-Resistance (Rds(on)) | 72mΩ - 103mΩ |
| Operating Temperature Range | -55℃ to 150℃ |
| Package Material | Not specified |
| Package Type | SOT-23 |
| Rated Voltage | 60V |
| Switching Speed | 6ns - 15ns |
| Threshold Voltage (Vth) | 0.8V - 2.0V |
| Transconductance (gm) | 3S |
Function And Role
Core Function
Switching and amplification in low-power electronic circuits
Key Characteristics
- 60V drain-to-source voltage (Vdss)
- 3A continuous drain current (Id)
- 89mΩ on-resistance (RDS(on)) at 10V, 3A
- 800mV gate threshold voltage (Vgs(th))
- 1.7W power dissipation (Pd)
- 26pF reverse transfer capacitance (Crss) @ 30V
- 510pF input capacitance (Ciss) @ 30V
- 7.5nC gate charge (Qg) @ 30V
- -55°C to +150°C operating temperature range
Application Domains
Basic Scenarios
- Low-power motor control circuits
- Battery management systems
- DC-DC converter switching stages
- Signal amplification in analog circuits
Extended Scenarios
- Solar inverter gate drivers
- Portable medical device power management
- IoT sensor node power switching
- Automotive electronic control units
Precautions
| Soldering | Use 0.5-1.2mm diameter solder wire; avoid prolonged heat exposure (>3s per pad) |
| Current Limit | Max continuous current: 3A ( peak: 10A for 10ms) |
| Voltage Limit | Max Vds: 60V; reverse bias voltage >100V may cause gate damage |
| Thermal Management | Thermal resistance: 62.5°C/W; ensure proper heat sinking for continuous operation |
| Storage | Store in <10% relative humidity; max storage temperature: +85°C |
| Risk Warnings |
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Alternative Model Params
- Vdss (Drain-Source Voltage)
- Continuous Drain Current (Id)
- RDS(on) @ 10V
- Gate Threshold Voltage (Vgs(th))
- Operating Temperature Range
Design Recommendations
| Layout | Maintain 3mm trace width for gate drive paths; use ground plane |
| Thermal | Add 10x10mm aluminum nitride heatsink for >1A continuous current |
| Compatibility | Verify gate driver compatibility with 800mV threshold voltage |
| Testing | Test RDS(on) at 10V, 25°C; measure Crss/Ciss @ 30V |
Market Positioning
| Strengths |
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| Weaknesses |
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