SI2309-HXY
Manufacturer
Model
SI2309-HXY
Category
The SI2309-HXY P-channel MOSFET is optimized for low-voltage switching in compact electronic systems. With its 60V rating, 2A current handling, and 200mΩ RDS(on), it suits consumer electronics and IoT applications. Thermal management requires careful PCB layout to handle 1.5W dissipation. While cost-effective in bulk purchases, its current limitations and moderate thermal performance restrict use in high-power scenarios.
Reference Pricing
Reference Stock
Specifications
| Drain Current (Id) | -2A |
| Drain-Source Voltage (Vds) | -60V |
| Gate-Source Voltage (Vgs) | ±20V |
| On-Resistance (Rds(on)) | 160mΩ |
| Operating Temperature Range | -55 to 150℃ |
| Package Material | Not specified in the provided document |
| Package Type | SOT-23 |
| Rated Voltage | -60V |
| Switching Speed | 40ns |
| Threshold Voltage (Vth) | -2.0V |
| Transconductance (gm) | 3S |
Function And Role
Core Function
P-channel MOSFET for low-voltage switching applications
Key Characteristics
- 60V drain-source voltage (Vdss)
- 2A continuous drain current (Id)
- 1.5W power dissipation (Pd)
- 200mΩ on-resistance (RDS(on)) at 4.5V gate-source voltage (Vgs) and 1.5A
- 2.6V gate threshold voltage (Vgs(th))
- SOT-23 package
Application Domains
Basic Scenarios
- Low-power signal switching in consumer electronics
- Battery management systems
- DC-DC converter circuits
Extended Scenarios
- Automotive electronic control units
- Industrial control systems
- IoT device power management
Precautions
| Soldering | Use finepitch soldering tools and avoid thermal overload (>150°C for >10s) |
| Current Limit | Max continuous current: 2A (peak 3A for 10s) |
| Voltage Limit | Max Vds: 60V (transient >100V for <1μs) |
| Thermal Management | Thermal resistance: 50°C/W (mounting height <1mm recommended) |
| Storage | Store in anti-static packaging below 30°C |
| Risk Warnings |
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Alternative Model Params
- Vdss ≥60V
- Idc ≥2A
- RDS(on) ≤200mΩ
- Vgs(th) ≤3V
- Package: SOT-23
Design Recommendations
| Layout | Maintain gate trace length <5mm to minimize charge injection |
| Thermal | Use copper pour >10mm² for heat dissipation |
| Compatibility | Verify gate threshold voltage with supply voltage |
| Testing | Test switching frequency >1MHz applications |
Market Positioning
| Strengths |
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| Weaknesses |
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