SI2302-HXY
Manufacturer
Model
SI2302-HXY
Category
The HXY SI2302-HXY is a high-reliability N-channel MOSFET optimized for low-power switching applications within -55℃ to +150℃ operating range. Its 20V rating, 55mΩ RDS(on), and 900mW Pd make it suitable for DC-DC converters and signal switching in consumer electronics. While cost-effective and compact, its moderate switching characteristics and lack of integrated protection features limit high-frequency applications. Proper thermal management and gate drive optimization are critical for maximizing performance in extended operating conditions.
Reference Pricing
Reference Stock
Specifications
| Drain Current (Id) | 2.8A |
| Drain-Source Voltage (Vds) | 20V |
| Gate-Source Voltage (Vgs) | ±12V |
| On-Resistance (Rds(on)) | 43mΩ - 73mΩ |
| Operating Temperature Range | -55℃ to 150℃ |
| Package Material | N/A |
| Package Type | SOT-23 |
| Rated Voltage | 20V |
| Switching Speed | 2.5ns - 21ns |
| Threshold Voltage (Vth) | 0.5V - 1.2V |
| Transconductance (gm) | 8S |
Function And Role
Core Function
N-channel MOSFET for switching and amplification applications
Key Characteristics
- 20V drain-source voltage (Vdss)
- 2.8A continuous drain current (Id)
- 55mΩ on-resistance (RDS(on)) at 4.5V and 2.8A
- 900mW power dissipation (Pd)
- 1.2V gate threshold voltage (Vgs(th))
- SOT-23 package
Application Domains
Basic Scenarios
- Low-power signal switching in consumer electronics
- DC-DC converter applications
- Power management circuits
Extended Scenarios
- Automotive electronic control systems
- Industrial motor control
- Solar inverter systems
- Battery management systems
Precautions
| Soldering | Use fine pitch soldering tools and heat sink protection for SOT-23 package |
| Current Limit | Max continuous current: 2.8A (peak 4A for 10ms) |
| Voltage Limit | Max Vds: 20V (transient voltage tolerance 30V) |
| Thermal Management | Thermal resistance: 50℃/W (requires heat sink for Pd >300mW) |
| Storage | Store in dry environment below 85% RH at -40℃ to +85℃ |
| Risk Warnings |
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Alternative Model Params
- Vdss ≥20V
- RDS(on) ≤60mΩ
- Pd ≥800mW
- Vgs(th) ≤1.5V
- Crss ≤30pF
- Qg ≤6nC
Design Recommendations
| Layout | Maintain gate trace length <5mm and use copper pour grounding |
| Thermal | Use thermal vias under MOSFET pad |
| Compatibility | Pairs with gate driver ICs supporting 4.5-5.5V Vgs |
| Testing | Verify RDS(on) at 25℃ and 150℃ using J-std-707 |
Market Positioning
| Strengths |
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| Weaknesses |
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