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DMG2305UX-7

Manufacturer

Heng Jiaxing

Model

DMG2305UX-7

Category

semiconductor
transistors

The DMG2305UX-7 P-channel MOSFET is optimized for low-voltage switching applications with its 20V rating, 5A current handling, and 45mΩ RDS(on). Ideal for IoT devices and battery systems where space and efficiency are critical. Requires careful thermal management and gate drive optimization to maximize performance within -55°C to +150°C operating range.

Reference Pricing

10+ :$0.0378
100+ :$0.0294
300+ :$0.0294
3000+ :$0.0238
6000+ :$0.0182
9000+ :$0.0182

Reference Stock

Available:1260

Specifications

Drain Current (Id)-5A
Drain-Source Voltage (Vds)-20V
Gate-Source Voltage (Vgs)+/-12V
On-Resistance (Rds(on))35mΩ
Operating Temperature Range-55℃ to 150℃
Package MaterialNot specified
Package TypeSOT-23
Rated Voltage-20V
Switching Speed5.6ns - 11.2ns
Threshold Voltage (Vth)-0.4V
Transconductance (gm)12.8S

Function And Role

Core Function

P-channel MOSFET for low-voltage switching applications

Key Characteristics

  • 20V drain-source voltage (Vdss)
  • 5A continuous drain current (Id)
  • 45mΩ on-resistance (RDS(on)) at 4.5V gate-source voltage
  • 400mV gate threshold voltage (Vgs(th))
  • 1.31W power dissipation (Pd)
  • 151pF reverse transfer capacitance (Crss) at 15V
  • 1.2nF input capacitance (Ciss) at 15V
  • 14.3nC gate charge (Qg) at 4.5V

Application Domains

Basic Scenarios

  • Low-power IoT devices
  • Battery management systems
  • Motor control circuits
  • Power supply regulation

Extended Scenarios

  • Solar inverter systems
  • Consumer electronics
  • Automotive electronic control units
  • LED driver circuits

Precautions

Soldering

Use fine pitch soldering tools for SOT-23 package

Current Limit

Max continuous current: 5A (peak 8A for 10ms)

Voltage Limit

Max Vdss: 20V (transient up to 30V)

Thermal Management

Operating temperature: -55°C to +150°C

Storage

Store in dry environment below 85% RH

Risk Warnings
  • Static discharge risk
  • Exceeding absolute maximum ratings
  • Gate voltage > ±20V prohibited

Alternative Model Params

  • Vdss (drain-source voltage)
  • Id (continuous drain current)
  • RDS(on) (on-resistance)
  • Vgs(th) (gate threshold voltage)
  • Pd (power dissipation)

Design Recommendations

Layout

Ensure 10mil trace width for gate drive

Thermal

Use copper pour for heat dissipation

Compatibility

Verify with 3.3V/5V logic families

Testing

Check Crss/Ciss at 100% duty cycle

Market Positioning

Strengths
  • Ultra-low RDS(on) for efficiency
  • Compact SOT-23 package
  • Cost-effective for high-volume production
  • RoHS compliant
Weaknesses
  • Moderate gate charge limits high-frequency switching
  • Limited industrial temperature range
  • Higher cost vs. standard MOSFETs

Datasheet

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