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AO3415A-HXY

Manufacturer

Heng Jiaxing

Model

AO3415A-HXY

Category

semiconductor
transistors

The AO3415A-HXY P-channel MOSFET offers reliable switching performance in 20V applications with 45mΩ RDS(on) and 4.1A current capability, suitable for compact consumer electronics and battery systems. Its SOT-23-3L package enables space-constrained designs while maintaining thermal management requirements through proper PCB layout and heatsink integration.

Reference Pricing

10+ :$0.0392
100+ :$0.0392
300+ :$0.0336
3000+ :$0.0294
6000+ :$0.0252
9000+ :$0.0252

Reference Stock

Available:10304

Specifications

Drain Current (Id)-4.1A
Drain-Source Voltage (Vds)-20V
Gate-Source Voltage (Vgs)±10V
On-Resistance (Rds(on))45 mΩ
Operating Temperature Range-55℃ ~ 150℃
Package MaterialNot specified
Package TypeSOT-23-3L
Rated Voltage-20V
Switching Speed12 ns (turn-on delay), 19 ns (turn-off delay), 10 ns (turn-on rise), 25 ns (turn-off fall)
Threshold Voltage (Vth)-0.35V ~ -0.55V
Transconductance (gm)8 mS

Function And Role

Core Function

P-channel MOSFET for low-voltage switching applications

Key Characteristics

  • 20V drain-source voltage
  • 4.1A continuous drain current
  • 45mΩ on-resistance at 4.5V
  • 900mV gate threshold voltage
  • 1.4W power dissipation

Application Domains

Basic Scenarios

  • Low-power signal switching
  • Consumer electronics control circuits

Extended Scenarios

  • Battery management systems
  • Motor control in compact devices
  • Solar inverter circuits

Precautions

Soldering

Use fine tip soldering iron (≤60W) and 0.5-1.0mm diameter wire

Current Limit

Max continuous current 4.1A (peak 8A for 10ms)

Voltage Limit

Max V ds20V, gate-source voltage ±20V

Thermal Management

Thermal resistance 50°C/W, require heatsink for >1W continuous dissipation

Storage

Store in <10% RH, <40°C environment

Risk Warnings
  • Static discharge hazard
  • Avoid overvoltage >30V

Alternative Model Params

  • Vdss ≥20V
  • RDS(on) ≤50mΩ
  • Id ≥3A
  • Vgs(th) ≤1V

Design Recommendations

Layout

Maintain 10mil trace width for gate drive

Thermal

Add 0.5mm copper pad under die

Compatibility

Verify gate threshold voltage compatibility with driver ICs

Testing

Test RDS(on) at 25°C and 100% RH conditions

Market Positioning

Strengths
  • Cost-effective (0.025-0.047$ per unit)
  • Compact SOT-23-3L package
  • ROHS compliant
Weaknesses
  • Lower current handling vs. TO-220 packages
  • Limited thermal performance

Datasheet

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