BSS138-7-F
Manufacturer
Model
BSS138-7-F
Category
The BSS138-7-F is a high-efficiency N-channel MOSFET optimized for low-voltage switching applications, featuring a 50V rating, 3.5Ω RDS(on), and compact SOT-23 packaging. Its 200mA current handling and 1.5V gate threshold voltage make it suitable for consumer electronics, battery systems, and automotive control circuits, with thermal performance requiring careful management in continuous operation scenarios.
Reference Pricing
Reference Stock
Specifications
| Drain Current (Id) | ±40mA |
| Drain-Source Voltage (Vds) | 50V |
| Gate-Source Voltage (Vgs) | ±20V |
| On-Resistance (Rds(on)) | 3.5Ω |
| Operating and Storage Temperature Range | -55°C to +150°C |
| Package Material | Lead-Free & Fully RoHS Compliant |
| Package Type | SOT-23 |
| Rated Voltage | 50V |
| Switching Speed | 20ns |
| Threshold Voltage (Vth) | 0.5V - 1.5V |
| Transconductance (gm) | 3.5mS |
Function And Role
Core Function
N-channel MOSFET designed for low-voltage switching and signal amplification
Key Characteristics
- 50V maximum drain-source voltage (Vdss)
- 200mA continuous drain current (Id)
- 3.5Ω on-resistance (RDS(on)) at 10V, 220mA
- 1.5V gate threshold voltage (Vgs(th))
- 300mW power dissipation (Pd)
- 50pF input capacitance (Ciss) at 10V
Application Domains
Basic Scenarios
- Low-power DC switching in consumer electronics
- Battery management systems
- Signal switching in communication devices
Extended Scenarios
- Automotive voltage regulation
- Industrial control circuits
- Solar inverter protection
- Medical device power management
Precautions
| Soldering | Use finepitch soldering tools and avoid prolonged heat exposure to prevent package damage |
| Current Limit | Max continuous current exceeds 220mA may cause thermal runaway |
| Voltage Limit | Operation above 50V risks gate oxide breakdown |
| Thermal Management | Thermal resistance 62.5°C/W requires heatsinking for >1W continuous operation |
| Storage | Store in moisture-free environment per MSDS guidelines |
| Risk Warnings |
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Alternative Model Params
- Vdss (≤60V)
- RDS(on) (≤4.5Ω)
- Pd (≥300mW)
- Ciss (≤60pF)
- Vgs(th) (1.2-1.8V)
Design Recommendations
| Layout | Maintain gate trace length <2mm and use decoupling capacitors |
| Thermal | Apply 0.5W copper pad for thermal relief |
| Compatibility | Verify with 2V-3.3V logic families |
| Testing | Perform JESD22-A114-A for ESD immunity |
Market Positioning
| Strengths |
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| Weaknesses |
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Datasheet
Assist inquiry
Distributors
Shenzhen Weishangcheng Technology Co., Ltd.
Shenzhen Futian District Sai Lian Hong Sheng Electronic Business Department
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Shenzhen Langguang Electronic Trade Co., Ltd.
Shenzhen Chengkun Gui Electronic Technology Co., Ltd.
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Shenzhen JiShiDa Electronics Co., Ltd.
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Shenzhen Futian New Asia Electronic Market Phase II Emerson Electronic Business Department Section Eight
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