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AO3400A

Model

AO3400A

Category

semiconductor
transistors

The ChipNobo AO3400A is a ROHS compliant MOSFET packaged in SOT-23, designed for low-power electronic devices, supporting drain-source voltage of -20V to +20V and continuous current of 1.0A, suitable for power management modules in fields such as IoT and wearable devices. Pay attention to the thermal challenges brought by its miniaturized characteristics and it is recommended to use a dedicated thermal design. The product achieves fast delivery through optimized price gradient (minimum order quantity 20 pieces) and a global warehousing network, but external drive solutions need to be evaluated for high-frequency application scenarios.

Reference Pricing

20+ :$0.014
200+ :$0.0126
600+ :$0.0126

Reference Stock

Available:280

Specifications

Drain Current (Id)5.2A
Drain-Source Voltage (Vds)30V
Gate-Source Voltage (Vgs)±12V
On-Resistance (Rds(on))27mΩ
Operating Temperature Range-55 to 150℃
Package MaterialNot specified in the provided document
Package TypeSOT-23
Rated Voltage30V
Switching Speed{"Turn-On Delay Time (Td(on))": "2.6ns", "Turn-Off Delay Time (Td(off))": "21.2ns", "Rise Time": "41.8ns", "Fall Time (Tf)": "6.4ns"}
Threshold Voltage (Vth)0.6mΩ V
Transconductance (gm)19S

Function And Role

Core Function

SOT-23 packaged MOSFET, suitable for low-power switching and power management circuits

Key Characteristics

  • ROHS compliant
  • Miniaturized packaging (SOT-23)
  • Operating temperature range -40°C to +150°C

Application Domains

Basic Scenarios

  • DC-DC converter
  • Low-power transistor switch
  • Battery management system

Extended Scenarios

  • Power module for IoT devices
  • Driver circuit for wearable devices
  • Automotive electronic control unit

Precautions

Soldering

It is recommended to use reflow soldering (peak temperature ≤260°C, time ≤20 seconds)

Current Limit

Maximum continuous current 1.0A (junction temperature <150°C)

Voltage Limit

Drain-source voltage supports -20V to +20V

Thermal Management

Thermal pad (area ≥8mm²) must be configured

Storage

Store in an environment with temperature 10-50°C, humidity <30%

Risk Warnings
  • Avoid electrostatic discharge
  • High-temperature environment may cause performance degradation

Alternative Model Params

  • Vds (drain-source voltage)
  • Id (conduction current)
  • PackageType (package type)

Design Recommendations

Layout

It is recommended to use a 4-layer PCB layout with a complete ground plane

Thermal

Use thermal materials with a thermal resistance ≤20°C/W

Compatibility

Compatible with most MOSFET driver ICs

Testing

1000-hour durability test is required

Market Positioning

Strengths
  • Cost advantage (starting from $0.0122 per unit)
  • Global supply chain coverage
  • Support for small batch procurement
Weaknesses
  • High-frequency switching performance is limited
  • Drive current requires external MOSFET driver

Datasheet

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