BU406D
Manufacturer
Model
BU406D
Category
The BU406D TO-252 NPN BJT provides reliable switching and amplification up to 150V/7A with 65W dissipation, suitable for industrial motor control and power supply systems. Its 30MHz transition frequency and 1V saturation voltage make it ideal for low-frequency switching applications, while moisture sensitivity level 3 requires controlled storage. Thermal management with heatsinks is critical to maintain performance at full load conditions.
Reference Pricing
Reference Stock
Specifications
| Cut-off Frequency (fT) | 30MHz |
| Gain (β) | 80 |
| Input Impedance | Not provided |
| Maximum Collector Current (Ic) | 7A |
| Maximum Collector Power Dissipation (Pc) | 65W |
| Maximum Collector Voltage (Vce) | 200V |
| Operating Temperature Range | -55~150℃ |
| Output Impedance | Not provided |
| Package Material | Not provided |
| Package Type | TO-252 |
| Power Dissipation | Not provided |
| Rated Voltage | Not provided |
Function And Role
Core Function
High-voltage, high-power NPN bipolar junction transistor (BJT) for switching and amplification applications
Key Characteristics
- 150V collector-emitter voltage (VCEO)
- 65W power dissipation (Pd)
- 7A collector current (Ic) at 5V
- 70 DC current gain (hFE) at 2A
- 30MHz transition frequency (fT)
- 1V VCE saturation voltage (VCE(sat))
- NPN transistor type
- TO-252 package
Application Domains
Basic Scenarios
- General-purpose signal amplification
- Low-frequency switching circuits
- Power supply regulation
Extended Scenarios
- Motor control systems
- Industrial automation equipment
- Power conversion modules
- LED driver circuits
Precautions
| Soldering | Use 60-80℃ soldering temperature with 20-30s soldering time to avoid package damage |
| Current Limit | Max continuous collector current: 7A (Derate above 70℃) |
| Voltage Limit | Max VCEO: 150V (transient voltage should not exceed 200V) |
| Thermal Management | Recommend heatsink with >10W/cm² thermal resistance |
| Storage | Store in <10% RH environment for >168h (per moisture sensitivity level 3) |
| Risk Warnings |
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Alternative Model Params
- VCEO (≥130V)
- Pd (≥60W)
- Ic (≥6A)
- hFE (≥50@1A)
- fT (≥20MHz)
- VCE(sat) (<1.2V)
Design Recommendations
| Layout | Keep transition zone away from high-frequency traces |
| Thermal | Use thermal vias under collector pad |
| Compatibility | Verify with SPTECH reference designs for TO-252 packages |
| Testing | Perform JESD22-A114A high-temperature operating life testing |
Market Positioning
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| Weaknesses |
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