MMBT2222ALT1G
Manufacturer
Model
MMBT2222ALT1G
Category
The MMBT2222ALT1G is a compact NPN BJT designed for low-power switching and signal amplification in space-constrained applications. With a 40V voltage rating, 600mA current capability, and 35 hFE at 0.1mA, it suits consumer electronics, IoT devices, and battery-powered systems. Thermal management and ESD protection are critical for reliable operation in extended temperature ranges.
Reference Pricing
Reference Stock
Specifications
| Gain-Bandwidth Product (fT) | 250 MHz |
| Input Impedance | 30 kΩ |
| Maximum Collector Current (Ic) | 600 mAdc |
| Maximum Collector Power Dissipation (Pc) | 225 mW |
| Maximum Collector-Base Voltage (VcBO) | 75 Vdc |
| Maximum Collector-Emitter Voltage (Vce) | 40 Vdc |
| Maximum Emitter-Base Voltage (VEBO) | 6.0 Vdc |
| Operating Temperature Range | -55 to +150 °C |
| Output Impedance | Not specified |
| Package Material | Not specified |
| Package Type | SOT-23 |
| Power Dissipation | 225 mW |
| Rated Voltage | Not specified |
Function And Role
Core Function
NPN bipolar junction transistor (BJT) for switching and amplification
Key Characteristics
- 40V collector-emitter voltage (VCEO)
- 600mA collector current (Ic)
- 225mW power dissipation (Pd)
- 35 DC current gain (hFE) at 0.1mA
- 300mV collector-emitter saturation voltage (VCE(sat))
- -55°C to +150°C operating temperature range
Application Domains
Basic Scenarios
- Low-power signal amplification in consumer electronics
- DC switching in small-signal circuits
- Sensor interface circuits
Extended Scenarios
- Motor control in IoT devices
- Power management in battery-powered systems
- Signal conditioning in communication modules
Precautions
| Soldering | Use fine tip soldering iron (≤300°C) and avoid prolonged heat exposure |
| Current Limit | Max continuous collector current: 600mA |
| Voltage Limit | Max VCEO: 40V, Max VCE: 40V |
| Thermal Management | Thermal resistance: 300°C/W (requires heat sink for continuous operation) |
| Storage | Store in dry environment below 85% RH |
| Risk Warnings |
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Alternative Model Params
- Collector-emitter voltage (VCEO)
- Collector current (Ic)
- Power dissipation (Pd)
- DC current gain (hFE)
- Collector-emitter saturation voltage (VCE(sat))
- Operating temperature range
Design Recommendations
| Layout | Keep transition zone short (<1mm) for minimal capacitance |
| Thermal | Use parallel copper planes for heat dissipation |
| Compatibility | Verify footprint compatibility with SOT-23 packages |
| Testing | Test VCE(sat) at 10V and 100mA for saturation characteristics |
Market Positioning
| Strengths |
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| Weaknesses |
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Datasheet
Assist inquiry
Distributors
Shenzhen Rongda Wei Electronic Technology Co., Ltd.
Shenzhen Weishangcheng Technology Co., Ltd.
Shenzhen Liushengshiji Electronic Co., Ltd.
Shenzhen Songyi Microelectronics Technology Co., Ltd.
Shenzhen Yuxin Chuangda Technology Co., Ltd.
Shenzhen Caifahuo Electronic Co., Ltd.
Shenzhen Xinyazhou Electronic Market Donglidao Electronic Business Department
Shenzhen Zhihai Yun Tian Electronic Co., Ltd.
Shenzhen Jinkaikebo Industrial Co., Ltd.
Shenzhen Kaida Xun Electronic Technology Co., Ltd.
Jingrun Xincheng (Shenzhen) Electronics Technology Co., Ltd.
Shenzhen Xingjiawang Electronic Technology Co., Ltd.
Shenzhen Xinjialong Technology Co., Ltd.
Shenzhen Guangfengsheng Electronic Co., Ltd.
Shenzhen Langguang Electronic Trade Co., Ltd.
Shenzhen Fuyi Technology Co., Ltd.
Shenzhen Tengchuangwei Technology Co., Ltd.
Shenzhen Hongchuangxinnong Technology Co., Ltd.
Shenzhen Kotianling Electronics Co., Ltd.
Shenzhen Weinengtengda Technology Co., Ltd.
Shenzhen Xianzhuanxin Electronic Technology Co., Ltd.
Shenzhen Xingkechuang Electronic Co., Ltd.
Shenzhen Dake Sheng Electronic Co., Ltd.
Shenzhen Chaoyu Technology Co., Ltd.
Dongguan Huahui Electronic Technology Co., Ltd.
Shenzhen Weijing Electronics Co., Ltd.
Shenzhen Shunxin Cheng Electronic Co., Ltd.
Shenzhen Xintaiyuan Semiconductor Co., Ltd.
Shenzhen Xiongshi Hui Technology Co., Ltd.
Shenzhen Futian District Hanwei Xing Electronic Business